1.電子物理學系黃俊達教授期刊論文發表：Jun-Dar Hwang*, Lee-Chi Luo, Sanjaya Brahma, Kuang-Yao Lo, "The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films," Thin Solid Films 618, 50-54, (2016 December) (SCI)  

2.電子物理學系黃俊達教授於2016年12月17日~18日至馬來西亞參加"24th International Conference on Engineering & Technology, Computer , Basic & Applied Sciences"國際會議，於會中發表壁報論文： J. D. Hwang* and T. H. Ho, "Effects of Oxygen Content on the Characteristics of Nickel Oxide Prepared by Radio-Frequency Magnetron Sputtering." (poster KLE-3126-102)。

3.電子物理學系鄭秋平教授於2016年12月7日~10日至美國參加"47th IEEE Semiconductor Interface Specialists Conference (SISC)"國際會議，於會中發表壁報論文：

 (1) Y. H. Lin, Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), K. Y. Lin, H. W. Wan, C. P. Cheng (鄭秋平), T. W. Pi, J. Kwo, and M. Hong, "Rebooting the interfacial knowledge of high-k dielectrics onIn0.53Ga0.47As(001)-4x2." (poster 6.5)。

 (2) W. S. Chen (陳婉馨), Y. H. Lin,  Y. T. Cheng (鄭伊婷), K. Y. Lin, T. W.  Chang, H. W. Wan, C. P. Cheng (鄭秋平), T. W. Pi, J. Kwo, and M. Hong, "Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance." (poster 6.8)。

 (3) Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), Y. H. Lin, H. W. Wan, K. Y. Lin, S. Wang, C. P. Cheng (鄭秋平), T. W. Pi, J. Kwo, and M. Hong, "Epi Ge(001)-2×1 surface aimed for high-κ deposition: An electronic structure study." (poster 9.2)。

 (4) C. P. Cheng (鄭秋平), W. S. Chen (陳婉馨),Y. T. Cheng (鄭伊婷), K. Y. Lin, G. J. Wei, Y. T. Cheng, Y. H. Lin, H. W. Wan, T. W. Pi, R. T. Tung, J. Kwo, and M. Hong, "Determination of Schottky barrier height prior to metal formation." (poster 11.5)。