1.電子物理學系陳思翰教授期刊論文發表：S.-H. Chen*(陳思翰), C.-F. Yu(余昌峰), and C.-S. Chien(簡佳珊), "Nanoscale electrical properties of ZnO nanorods grown by chemical bath deposition," Microscopy Research and Technique 80(7), 671-679. (2017 July) (SCI)

2. 電子物理學系陳思翰教授期刊論文發表：S.-H. Chen*(陳思翰), C.-W. Su(蘇炯武), L.-H. Chang(張儷馨), and T.-H. Tsai, "Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy," Microscopy Research and Technique 80(7), 731-736. (2017 July) (SCI)

3.電子物理學系黃俊達教授期刊論文發表： J. D. Hwang* and Y. C. Chang," Enhancing the Ultraviolet/Visible Rejection Ratio of Mg_xZn_1-xO Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma Treatment," IEEE Trans. Electron Dev. 64, 3234-3238. (2017 July) (SCI)

4.電子物理學系黃俊達教授期刊論文發表： J. D. Hwang*, C. C. Yang, and C. M. Chu," MgZnO/ZnO Two-Dimensional Electron Gas Photodetectors Fabricated by RF-Sputtering," ACS Appl. Mat. Interfaces 9, 23904-23908. (2017 July) (SCI)

5.電子物理學系高柏青教授於2017年7月4~7日至日本京都市參加"The 24th International Workshop on Active-matrix Flatpanel Displays And Devices - TFT Technologies and FPD Materials" (AM-FPD17)國際會議，於會中發表壁報論文：Po-Ching Kao(高柏青), Ze-Hui Chen(陳澤輝), Hao-En Yen(顏浩恩),Tzu-Hsiang Liu(劉子翔), Cheng-Liang Huang(黃正良), "The Effect of Air Annealing on the Properties of MoO3 Films and Its Application for Organic Light Emitting Diodes." (poster Part42)。

6.電子物理學系陳挺煒助理教授於2017年7月9日~14日至德國符茲堡參加PLMCN18 "The 18^th International Conference on Physics of Light-Matter Coupling in Nanostructures"學術研討會，於會中發表壁報論文：T. W. Chen and S. C. Cheng, "Instability of two-dimensional ring dark solitons in microcavity polariton condensates." (poster P2-010)。

7.電子物理學系鄭秋平教授於2017年7月15 ~ 18日至美國丹佛參加"The AVS 17^th International Conference on Atomic Layer Deposition (ALD)"國際會議，於會中發表口頭論文及壁報論文:

 (1) Y. T. Cheng(鄭伊婷), W. S. Chen(陳婉馨), K. Y. Lin, L. B. Young, Y. H. Lin, H. W. Wan, C. P. Cheng(鄭秋平), T. W. Pi, J. R. Kwo, and M. Hong, "Elucidation of distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron spectroscopy." (oral AF-MoA16)

 (2) W. S. Chen(陳婉馨), K. Y. Lin, L. B. Young, Y. T. Cheng(鄭伊婷), Y. H. Lin, H. W. Wan, C. Y. Yang, C. P. Cheng(鄭秋平), T. W. Pi, J. Kwo, and M. Hong, "Interface dipole of high-k Y2O3 on GaAs(001)-4x6 attained using cycle-by-cycle ALD and synchrotron radiation photoelectron spectroscopy." (oral AF+AA-MoM6)

 (3)Y. H. Lin, H. W. Wan, L. B. Young, C. K. Cheng, K. Y. Lin, Y. T. Cheng (鄭伊婷), W. S. Chen(陳婉馨), C. P. Cheng(鄭秋平), T. W. Pi, J. R. Kwo, and M. Hong, "ALD-Y2O3/GaAs(001) having extremely high thermal stability at 900 °C and very low interfacial trap densities - comparative studies with ALD Al2O3 and HfO2 gate dielectrics." (poster AA-SuP61)

8.電子物理學系林立弘副教授於2017年7月16～21日至美國水牛城參加Edison 20 (the 20^th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures) 國際會議，於會中發表壁報論文：C. Chuang, M. Miharu, N. Matsumoto, M. Matsunaga, C.-W. Liu, B.-Y. Wu, G.-H. Kim, L.-H. Lin, Y. Ochiai, K. Watanabe, T. Taniguchi, Dinesh Kumar, C.-T. Liang and N. Aoki, "Hot carriers in disordered graphene wit hexagonal-boron nitride and multi-layer graphene." (poster MoP24)